Dopant	0.1% ~ 3%	Orientation	A-CUT +/-0.5°
Size&Tolerance	W(+/-0.1)*H(+/-0.1)*L(+0.5/-0.1)mm
Surface quality	10/5	Perpendicularity	≤5′
Parallelism	≤10″	Bevel	<0.2mmx45°
Flatness	λ/10@633nm	Chips	<0.1mm
TWD	λ/6@633nm	CA	≥95%
Coatings	C1--- AR@1064(R<0.2%) C2--- AR@1064(R<0.2%)&532(R<0.5%) C3--- AR@1064(R<0.2%)&808(R<0.5%) C4--- AR@1064(R<0.2%)&532(R<0.5%)&808(R<3%) C5--- HR@1064(R>99.8%)&HT@808(T>95%) C6--- HR@1064(R>99.8%)&532(R>99.5%)&HT@808(T>95%)

P/N	Doping	Cut Angle	Size(mm)	Coating
NYV-20-331-C6/C2	2%	A-CUT	3x3x1	S1:HR@1064&532&HT@808nm S2:AR@1064&532nm
NYV-10-332-C6/C2	1%	A-CUT	3x3x2	S1:HR@1064&532&HT@808nm S2:AR@1064&532nm
NYV-10-333-C6/C2	1%	A-CUT	3x3x3	S1:HR@1064&532&HT@808nm S2:AR@1064&532nm
NYV-07-333-C6/C2	0.7%	A-CUT	3x3x3	S1:HR@1064&532&HT@808nm S2:AR@1064&532nm
NYV-07-333-C4/C2	0.7%	A-CUT	3x3x3	S1:AR@1064&532&808nm S2:AR@1064&532nm
NYV-07-335-C4/C2	0.7%	A-CUT	3x3x5	S1:HR@1064&532&HT@808nm S2:AR@1064&532nm
NYV-05-335-C5/C1	0.5%	A-CUT	3x3x5	S1:HR@1064&808nm S2:AR@1064nm
NYV-05-3310-C3/C1	0.5%	A-CUT	3x3x10	S1:AR@1064&808nm S2:AR@1064nm
NYV-03-3310-C3/C1	0.3%	A-CUT	3x3x10	S1:AR@1064&808nm S2:AR@1064nm
NYV-03-3312-C3/C1	0.3%	A-CUT	3x3x12	S1:AR@1064&808nm S2:AR@1064nm
NYV-027-3310-C3/C1	0.27%	A-CUT	3x3x10	S1:AR@1064&808nm S2:AR@1064nm
NYV-027-3312-C3/C1	0.27%	A-CUT	3x3x12	S1:AR@1064&808nm S2:AR@1064nm
NYV-02-3310-C3/C1	0.2%	A-CUT	3x3x10	S1:AR@1064&808nm S2:AR@1064nm
NYV-02-3312-C3/C1	0.2%	A-CUT	3x3x12	S1:AR@1064&808nm S2:AR@1064nm

 

Physical Proertie:

Crystal Structure	Tetragonal System
Space Group	I41/amd
Lattice Constants	a=b=0.71183nm, c=0.62932nm。
Melting Temperature	1825℃
Density	4.22g/cm3
Thermal Conductivity	<100>(a): 0.0510 W/cmK <001>(c): 0.0523 W/cmK
Thermal Expansion@25℃	αa=4.43 ×10-6/K αc=11.37 ×10-6/K
Mohs hardness	4-5
Index of Refraction	no=1.958, ne=2.168
Thermal Optical Coefficient	dna/dT=  8.5×10-6/K dnc/dT=  3.0×10-6/K

lasing wavelength	1064nm, 1342nm, 914nm
Pump Wavelength	808nm
Emission Cross section @1064nm	25 ×10-19cm2
absorption cross section @ 808nm	2.7×10-19cm2 (1 at% Nd3+)
absorption coefficient@808nm	30.6/cm( E∥C ),  11.4 /cm (E⊥C)
Intrinsic loss:	0.02cm-1 @1064nm
Gain bandwidth:	0.96nm@1064nm
Polarization	E∥C (parallel to C axis, π polarization)
Fluorescent lifetime	90 μs (1% Nd doping)
Sellmeier Equation	n02=3.77834+0.069736/(λ2-0.04724)-0.010813λ2 ne2=4.59905+0.110534/(λ2-0.04813)-0.012676λ2

Laser Properties: The Nd:YVO4 crystal has large stimulated emission cross-sections at both 1064nm and 1342nm. The stimulated emission cross-section of an a-axis cut Nd:YVO4 crystal at 1064nm is about 4 times higher than that of the Nd:YAG crystal. Although the lifetime of Nd:YVO4 is about 2.7 times shorter than that of Nd:YAG. Because of its high pump quantum efficiency, the slope efficiency of Nd:YVO4 can be very high if the laser cavity is properly designed. In the following Table lists the major laser properties of Nd:YVO4 in comparison with those of Nd:YAG.  

Laser crystal	Doping(atm%)	σ(x10-19cm2)	a (cm-1)	τ (μs)	La (mm)	Pth(mW)	η s(%)
Nd:YVO4(a-cut)	1.0 2.0	25 25	31.2 72.4	90 50	0.32 0.14	30 78	52 48.6
Nd:YVO4(c-cut)	1.1	7	9.2	90		231	45.5
Nd:YAG	0.85	6	7.1	230	1.41	115	38.6